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INTEGRATED CIRCUITS
SA1921 Satellite and cellular dual-band RF front-end
Product specification Supersedes data of 1998 Sep 11 IC17 Data Handbook 1999 Mar 02
Philips Semiconductors
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
DESCRIPTION
The SA1921 is an integrated dual-band RF front-end that operates at both cellular (AMPS, DAMPS, and GSM) and satellite (1515-1600 MHz) frequencies, and is designed in a 13 GHz fT BiCMOS process--QUBiC1. The low-band is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure at 943 MHz with 18.3 dB of gain and an IIP3 of -5 dBm. The wide-dynamic range mixer has a 11 dB noise figure at 943 MHz with 7.2 dB of gain and an IIP3 of +5 dBm. The high-band contains a receiver front-end, and a high frequency transmit mixer intended for closed loop transmitters. One advantage of the high-band architecture is an image-rejection mixer with over 30 dB of image rejection; thus, eliminating external filter cost while saving board space. The system noise figure is 3.9 dB at 1550 MHz with a power gain of 22.2 dB and an IIP3 of -11.5 dB.
FEATURES
* Low current consumption * Outstanding low- and high-band noise figure * Excellent gain stability versus temperature and supply * Image reject high-band mixer with over 30 dB of rejection * Increased low-band LNA gain compression during analog * LO input and output buffers * On chip logic for network selection and power down * Very small outline package
APPLICATIONS
transmission
* 800 to 1000 MHz analog and digital receivers * 1515 to 1600 MHz digital receivers * Portable radios * Digital mobile communications equipment
PIN CONFIGURATION
MIX IN V CC Tx IF B GND GND GND GND Tx B N/C Tx A Tx IF A 2 N/C 1
12 HI/LO SYN ON HIGH BAND IF A HIGH BAND IF B LOW BAND IF A LOW BAND IF B GND HIGH BAND LO A HIGH BAND LO B LOW BAND LO A LOW BAND LO A Rx ON 13 14 15 16 17 18 19 20 21 22 23 24
11
10
9
8
7
6
5
4
3
48 47 46 45 44 43 42 41 40 39 38 37
N/C GND GND LOW BAND LNA OUT GND LOW BAND LNA IN HIGH BAND LNA IN GND V CC GND STRONG SIGNAL N/C
25 VCC
26 Tx ON
27 V CC
28 HIGH BAND IMAGE SET I
29 GND
30 HIGH BAND LO INPUT
31 LOW BAND LO INPUT
32 GND
33 HIGH BAND IMAGE SET Q
34 GND
35 GND
36 N/C
SR01732
Figure 1.
Pin Configuration
ORDERING INFORMATION
TYPE NUMBER SA1921 NAME LQFP48 PACKAGE DESCRIPTION Plastic low profile quad flat package; 48 leads; body 7x7x1.4 mm VERSION SOT313-2
1999 Mar 02
2
853-2121 20917
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
PIN DESCRIPTIONS
PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 PIN NAME N/C Tx IF A Tx IF B GND MIX IN GND VCC GND Tx A Tx B GND N/C HI/LO SYN ON HIGH BAND IF A HIGH BAND IF B LOW BAND IF A LOW BAND IF B GND HIGH BAND LO A HIGH BAND LO B LOW BAND LO A LOW BAND LO B Rx ON VCC Tx ON VCC HIGH BAND IMAGE SET I GND HIGH BAND LO INPUT LOW BAND LO INPUT GND HIGH BAND IMAGE SET Q GND GND N/C N/C STRONG SIGNAL GND VCC GND HIGH BAND LNA IN LOW BAND LNA IN GND LOW BAND LNA OUT GND GND N/C No Connection Transmit IF A Transmit IF B Ground Low Band Mixer Input Ground VCC Ground Transmit Signal A Transmit Signal B Ground No Connection High Band/Low Band Control LO Buffer Power Control High Band IF A High Band IF B Low Band IF A Low Band IF B Ground High Band LO Output High Band LO Output Low Band LO Output Low Band LO Output LNA/Mixer Power Control VCC Tx Mixer/Driver Power VCC High Band Image Set I Ground High Band LO Connection Low Band LO Connection Ground High Band Image Set Q Ground Ground No Connection No Connection Strong Signal Detection Ground VCC Ground High Band LNA Input Low Band LNA Input Ground Low Band LNA Output Ground Ground No Connection DESCRIPTION
1999 Mar 02
3
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
MIX IN
Tx IF B
Tx IF A
GND
GND
V CC
GND
GND
Tx B
Tx A
N/C
HI/LO
N/C
N/C
SYN ON
GND
HIGH BAND IF A
GND
HIGH BAND IF B
LNA OUT
LOW BAND IF A 5 pF LOW BAND IF B 5 pF GND IMAGE REJECT MIXER
GND
LOW BAND LNA IN
HIGH BAND LNA IN
HIGH BAND LO A
GND
HIGH BAND LO B
V CC
LOW BAND LO A
GND
LOW BAND LO B
STRONG SIGNAL
Rx ON
N/C
HIGH BAND IMAGE SET I
HIGH BAND IMAGE SET Q
GND
GND
GND
HIGH BAND LO INPUT
LOW BAND LO INPUT
GND
VCC
Tx ON
V CC
N/C
SR01733
Figure 2.
Block Diagram
1999 Mar 02
4
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 1. POWER DOWN CONTROL
LO BUFFER Control State (Hi/Lo, Syn On, Rx On, Tx On, Strong Signal) x000x 01000 01100 01101 01110 01010 11000 11100 11101 11010 Sleep Low-Band LO Buffer on Low-Band Receive Normal Low-Band receive Strong Signal Low-Band Transmit (Analog only) N/A High-Band LO Buffer On High-Band Receive Normal High-Band Receive Strong Signal N/A High Band Off Off Off Off Off Off On On On On Low Band Off On On On On On Off Off Off Off LNA High Band Off Off Off Off Off Off Off On Off Off Low Band Off Off On Off On
High Bias
MIXER High Band Off Off Off Off Off Off Off On On Off Low Band Off Off On On On Off Off Off Off Off
TX MIXER DRIVER High Band Off Off Off Off Off Off Off Off Off On Low Band Off Off Off Off On On Off Off Off Off
Off Off Off Off Off
NOTE: 1. "0" is low logic state; "1" is high logic state.
1999 Mar 02
5
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
OPERATION
The low-band contains both an LNA and mixer that is designed to operate in the 800 to 1000 MHz frequency range. The high-band contains an LNA and image-rejection mixer that is designed to operate in the 1515 to 1600 MHz frequency range with over 30 dB of rejection over an intermediate frequency (IF) range from 150 to 185 MHz. Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in the I and Q IF channels that phase shift the IF by 45_ and 135_, respectively. The two phase shifted IFs are recombined and buffered to produce the IF output signal. The LO section consists of an internal phase shifter to provide quadrature LO signals to the receive mixers. The filters outputs are buffered before being fed to the receive mixers. The transmit mixer section consists of a low-noise amplifier, and a down-convert mixer. In the transmit mode, an internal LO buffer is used to drive the transmit IF down-convert mixer.
Control Logic Section
Pins HI/LO, SYN ON, Rx On, Tx On, Strong Signal, control the logic functions. The HI/LO mode selects between low-band and high-band operation. The SYN ON mode enables the LO buffers independent of the other circuitry. When SYN ON is high, all internal buffers in the LO path of the circuit are turned on, thus minimizing LO pulling when the remainder of the receive or transmit chain is powered-up. The Rx ON mode enables the LO buffers when the device is in the low-band receive normal, receive strong signal and transmit modes; the Rx ON mode enables the LO buffers, also, when the device is in the high-band receive normal, and receive strong signal modes. The Tx ON mode enables the transmit mixer. The strong signal mode, when disabled, allows the low- and high-band LNAs to function normally; and when the strong signal mode is enabled, it turns-off the low- and high-band LNAs. This is needed when the input signal is large and needs to be attenuated.
Low-Band Receive Section
The circuit contains a LNA followed by a wide-band mixer. In a typical application circuit, the LNA output uses an external pull-up inductor to VCC and is AC coupled. The mixer IF outputs are differential. A typical application will load the output buffer with an inductor across the IF outputs, a pull-up inductor to VCC and an AC coupled capacitor to the matching network.
Local Oscillator (LO) Section
The LO input directly drives the two internal all-pass networks to provide quadrature LO to the receive mixers. A synthesizer-on (SYN ON) mode is used to power-up all LO input buffers, thus minimizing the pulling effect on the external VCO when entering receive or transmit mode.
Low-Band Receive Section (Analog Transmit Mode)
The bias current of the low-band LNA will increase during analog transmission, which increases its gain compression point and makes the receiver less sensitive to PA leakage power for an AMPS application.
Transmit Mixer Section
The transmit mixer is used for down-conversion to the transmit IF. Its inputs are coupled to the transmit RF which is down-converted to a modulated transmit IF frequency, and phase-locked with the baseband modulation. The IF outputs are HIGH impedance (open-collector type). A typical application will load the output buffer with an inductor across the IF outputs, a pull-up inductor to VCC and AC coupled capacitors to the matching network.
High-Band Receive Section
The circuit contains an LNA followed by two high dynamic range mixers. These are Gilbert cell mixers; the internal architecture is fully differential. The LO is shifted in phase by 45_ and 135_ and mixes the amplified RF signal to create I and Q channels. The two I and Q channels are buffered, phase shifted by 45_ and 135_, respectively, amplified and recombined internally to realize the image rejection. The IF output is differential and of the open-collector type. A typical application will load the output buffer with an inductor across the IF outputs, a pull-up inductor to VCC and an AC coupled capacitor to the matching network.
1999 Mar 02
6
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC PD PIN Tsrg PARAMETERS Input supply voltage at pins: 7, 25, 27, 40 Power dissipation Input power at all ports Storage temperature range VALUE 4.75 150 +20 -65 to +125 UNIT V mW dBm C
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC TO DC Supply voltage Operating temperature range (pin temp) PARAMETERS RATING 3.6 to 3.9 -40 to +85 UNIT V C
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
VCC = +3.75 V, TA = +25C unless otherwise noted SYMBOL ICC ICC ICC ICC ICC ICC ICC ICC PARAMETERS Current Consumption: Sleep Mode Low Band Receive Normal Low Band Receive Strong Low Band Transmit (Analog) Low Band Transmit (GSM) High Band Receive Normal High Band Receive Strong High Band Transmit (GSM) Logic Low Input Logic High Input CONDITION X000X 01100 01101 01111 01010 11100 11101 11010 0 1.9 32.0 9.8 MIN. TYP. 1.0 12.2 9.0 18.0 16.5 40.0 36.0 19.4 0.5 4.0 48.0 MAX. 25 14.7 UNIT mA mA mA mA mA mA mA mA V V
1999 Mar 02
7
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
AC ELECTRICAL CHARACTERISTICS Low-Band, Dual Mode of Operation
VCC = +3.75 V, FreqRF = 943 MHz, FreqLO = 1106 MHz, PLOin = -3 dBm, TA = +25_C; unless otherwise stated. Min TYP PARAMETERS -3s +3s System RF Input Frequency Range IF Frequency LO Frequency Cascaded Power Gain; includes 3dB filter loss Power Gain Reduction (Strong Signal Mode--LNA Off) Cascaded Noise Figure; includes 3dB filter loss LNA LNA Gain LNA IIP3 (60 kHz spacing) LNA IIP3 (200 kHz spacing) LNA Noise Figure LNA 1 dB RF Input Compression Point Mixer Mixer Gain Mixer IIP3 (60 kHz spacing) Mixer Noise Figure Mixer 1 dB RF Input Compression Point Other Input Impedance, RF Port Return Loss at LNA Inputs and Output Return Loss at Mixer Input and Outputs LO leakage at RF Port LO Input Power Turn ON/OFF Time -5 -42 -3 100 -1 50 -10 -10 W dB dB dBm dBm msec 1 1 6.9 4.0 10.4 7.2 5.0 11.0 -13.0 7.5 6.0 11.6 dB dBm dB dBm 1.6 17.6 -6.0 18.3 -5.0 -3.0 1.7 -21.0 1.8 19 -4.0 dB dBm dBm dB dBm 1032 21.4 30 869 943 163 1106 22.5 36 2.6 23.6 42 1123 960 MHz MHz MHz dB dB dB Max UNITS NOTES
Low-Band LO Buffer
VCC = +3.75 V, FreqLO = 1106 MHz, PLOin = -3 dBm, TA = +25_C; unless otherwise stated. Min PARAMETERS -3s LO Frequency Differential Output Power Differential Output Impedance Harmonic Content Input Power Input Impedance Turn On/Off Time NOTE: 1. External matching network is required. -5 1032 TYP. 1106 -7 100 -20 -3 50 10 -1 +3s Max 1123 UNITS MHz dBm W dBc dBm W msec 1 NOTES
1999 Mar 02
8
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
AC ELECTRICAL CHARACTERISTICS High-Band, Single Mode of Operation LNA and Image Reject Mixer
VCC = +3.75 V, FreqRF = 1550 MHz, FreqLO = 1713 MHz, PLOin = -3 dBm, TA = +25_C; unless otherwise stated. PARAMETERS RF Input Frequency Range IF Frequency LO Frequency Power Gain Power Gain Reduction (Strong Signal Mode--LNA Off) Noise Figure Input Impedance, RF Port Return Loss at Inputs LO leakage at RF Port 1 dB RF Input Compression Point IP3 Order Intermodulation Product) Referred to the RF Input Port (2 x LO) - (2 x RF) Spur Performance -50 dBm IN Referred to RF Input Port 50 In ut Measure at LO = 1688 MHz and RF = 1606 MHz (3 x LO) - (3 x RF) Spur Performance. -50 dBm IN Referred to RF Input Port. Measure at LO = 1688 MHz and RF = 1634 MHz. Image rejection, fRX+2fIF Referred to the RF Input Port LO Input Power Turn ON/OFF Time 31.5 -5 (3RD -14 -48 -24 -11.5 -62 -9 MIN 1515 150 1665 21.5 34 3.7 22.2 47 3.9 50 -10 22.9 60 4.1 163 -3s TYP. +3s MAX 1600 185 1785 UNITS MHz MHz MHz dB dB dB W dB dBm dBm dBm dBc 1 NOTES
-102
dBc
34 -3 10
36.5 -1
dB dBm msec
High-Band LO Buffer
VCC = +3.75 V, FreqLO = 1713 MHz, PLOin = -3 dBm, TA = +25_C; unless otherwise stated. PARAMETERS LO Frequency Range Differential Output Power Differential Output Impedance Harmonic Content Input Power Input Impedance Turn On/Off Time NOTE: 1. External matching network is required. -5 MIN 1665 -9 100 -20 -3 50 10 -1 -3s TYP. +3s MAX 1785 UNITS MHz dBm W dBc dBm W msec 1 NOTES
1999 Mar 02
9
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Transmit Mixer
VCC = +3.75 V, FreqRF = 1550 MHz, FreqLO = 1713 MHz, PLOin = -3 dBm, TA = +25_C; unless otherwise stated. PARAMETERS TX Mixer Input Frequency TX RF Input Impedance, Balanced TX Mixer Output Frequency TX IF Load Impedance Maximum TX IF Load Capacitance Conversion Power Gain 1 dB Input Compression Point IIP2 IIP3 Noise Figure (double sideband) Reverse Isolation TXIN-LOIN Isolation LOIN-TXIN NOTES: 1. Input and output ports matched to 50 W. 40 40 -9 17 18 -17 20 -7 8.5 -5 19 70 MIN 824 200 163 1000 2 200 -3s TYP. +3s MAX 1661 UNITS MHz W MHz W pF dB dBm dBm dBm dB dB dB 1 NOTES
1999 Mar 02
10
R28 AP43 J1-3
A
J1-4 C8 10 pf L12 DPS1 C37 100 pf C38 1000 pf 4.7 nH R27 RxMxGND DUT-4 GND GND J29-2 L1 180 nh DUT-6 GND 3.92K R31 AP16 P8 C1 1000 pf C22 DUT-5 LBMIN C30 1.5 pf 33 pf L9 8.2 nH B DUT-7 VCC R30 DUT-8 GND C21 HBLIN C29 2.2 pf 33 pf L8 8.2 nH B DUT-9 TXA L5 VCC DUT-10 TXB GND STRONG N/C N/C DUT-36 DP23 DUT-37 DUT-38 DUT-39 DP31 J28-2 C2 1.5 pf 33 pf C17 100 pf C14 1000 pf DUT-40 DPS1 B 1 uH A C33 0.1 uf 3.92K C19 C18 33 pf A R19 51.1 DUT-42 GND N/C DUT-11 DUT-12 R3 3.92K 1 AT8 3 PAT-6 AP16 J26-3 P6 C10 1000 pf C15 100 pf R22 51.1 PAT-6 A LBLIN DUT-43 1 AT7 3 3.92K J28-3 GND DUT-41 R2 562 DUT-44 R29 AP47 GND DUT-47 332 DUT-46 C23 10 pf L2 150 nH SA1921 DUT-2 TXIFA TXIFB LBLOUT DUT-45 DUT-3 10 pf
B
AP45 DUT-1 N/C N/C DUT-48 3.92K
R1
1999 Mar 02
C24
B
3.92K
P1
3
1
AT9 PAT-10
R32
Philips Semiconductors
1
A C9 SELECT 1
DPS1
L3
A
C31 0.1 uf
1 uH B
J2-4
AP9 R13
1K
J2-5
AP10
P2
1
AT10
3
Figure 3.
DUT-13 HILO SYNON HBIFA X2ON GND DUT-34 DUT-35 DUT-14 C5 DUT-15 R10 1
A B
PAT-10
R17 51.1
J6-5
AP42
R4
J13-2
DP33
3.92K
J13-3
DP34
Satellite and cellular dual-band RF front-end
SA1921 Dual-Band Test Circuit
11
5.6 pf IMAGE REJECT MIXER DUT-16 HBIFB LBBPS DUT-33 C27 5.6 pf
A
P3 C3 5.6 pf L6 150 nH
1
AT1 PAT-10 R9 1.21K L10 180 nH C4 1000 pf
B
3
J25-2
DPS1
AP14 R16 1
J26-2
J11-2 C6 DUT-17 LBIFA R18 1
A
AP46
R26
3.92K GND
A
P5 5.6 pf L7 150 nH DUT-18 LBIFB C28
SELECT
DUT-32
1 C7 8.2 pf
AT2
3
R15 3.92K C26 LBTNK DUT-31 10 pf R21 51.1 C25 HBTNK DUT-30 10 pf R20 51.1
AP36
J24-4
PAT-10 R11 4.32K
B B
1 AT5 3 PAT-6
DPS1 C11 1000 pf 1
L11 150 nh
U1 3 PORT 2 6 SUM PORT 4 PORT 1 LRPS-2-11 1 AT6 3 PAT-3
P7
J12-4 3 AT3 1 PAT-10 R24 1 R23 DUT-19 GND HBLOA HBLOB DUT-20 C34 33 pf DUT-21 C36 33 pf DUT-22 C35 33 pf DUT-23 DUT-24 LBLOA 1 C20 33 pf
AP44
R25
3.92K
P4 3 AT4 1 PAT-10
6
U2 4 PORT 1 SUM PORT PORT 2 3
GND 2X HBBPS
DUT-29
R14 3.92K DUT-28
AP39
LRPS-2-11
J22-5 AP11 R12 1 L4 VCC DUT-27 C16 100 pf TXON DUT-26 C12 1000 pf B 1 uH A C32 0.1 uf DPS1LF DPS1LS DPS1HF DPS1HS DP19
J11-5
AP41
R8
J21-2 J100-2 J100-3 J100-4 J100-5 J23-4
J15-3
AP40
3.92K R7
J20-3
AP38
3.92K R6
J21-3
AP12
3.92K R5
LBLOB RXON VCC DUT-25 C13 1000 pf 1 DO NOT ASSEMBLE
Product specification
SA1921
SR01802
J16-2
DP26
3.92K
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
5 pF
5 pF
SR01755
Figure 4. NOTE: GSM and Satellite frequencies
SA1921 Dual-Band Application Circuit
1999 Mar 02
12
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
PERFORMANCE CHARACTERISTICS
VCC = +3.75 V, FreqRF = 1550 MHz, FreqLO = 1713 MHz, PLOin = -3 dBm, TA = +25_C; unless otherwise stated.
16.00 15.00 45.00 14.00 13.00 I CC (mA) +25_C 12.00 11.00 10.00 30.00 9.00 8.00 3.60 3.65 3.70 3.75 VCC (V) 3.80 3.85 3.90 25.00 3.60 3.65 3.70 3.75 VCC (V) 3.80 3.85 3.90 -40_C +85_C +25_C I CC (mA) 40.00 -40_C 35.00 50.00 +85_C
SR01734
SR01735
Figure 5.
Low Band Receive Normal ICC
Figure 6.
High Band Receive Normal ICC
30 28 26 REJECTION (dB) 24 GAIN (dB) 22 20 18 16 14 12 10 150 155 160 165 170 IF FREQUENCY (MHz) 175 180 185
45
40
35
30
25
20 150 155 160 165 170 175 180 185 IF FREQUENCY (MHz)
SR01750
SR01751
Figure 7.
High Band Gain vs. IF Frequency
Figure 8.
High Band Image Rejection vs. IF Frequency
-8.5 -9 -9.5 -10 IP3 (dBm) -10.5 -11 -11.5 -12 -12.5 -13 -13.5 150 155 160 165 170 175 180 185 IP2 (dBm)
18 17 16 15 14 13 12 11 10 9 8 150 155 160 165 170 175 180 185
IF FREQUENCY (MHz)
IF FREQUENCY (MHz)
SR01752
SR01753
Figure 9.
High Band IP3 vs. IF Frequency
Figure 10.
High Band IP2 vs. IF Frequency
1999 Mar 02
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Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
6 5 NOISE FIGURE (dBm) 4 3 2 1 0 150 155 160 165 170 175 180 185 IF FREQUENCY (MHz)
22 21 20 -40_C GAIN (dB) 19 +25_C 18 +85_C 17 16 15 14 860 870 880 890 900 910 920 930 940 950 960 FREQUENCY (MHz)
SR01754
SR01736
Figure 11.
High Band NF vs. IF Frequency
Figure 12.
LB LNA Gain vs. Frequency
-2 -3 -4 -5 IP3 (dBm) -6 -7 -8 -9 -10 -11 -12 860 0 870 880 890 900 910 920 930 940 950 960 860 870 880 890 900 910 920 930 940 950 960 FREQUENCY (MHz) FREQUENCY (MHz) -40_C +25_C +85_C NOISE FIGURE (dB) 3 2.5 +85_C 2 +25_C 1.5 1 0.5 -40_C
SR01737
SR01738
Figure 13.
LB LNA IP3 vs. Frequency
Figure 14.
LB LNA Noise Figure vs. Frequency
12 -40_C 10 +25_C 8 GAIN (dB) IP3 (dBm) +85_C 6 4 2 0 860 870 880 890 900 910 920 930 940 950 960 FREQUENCY (MHz)
8 7 6 5 +25_C 4 3 2 1 0 860 870 880 890 900 910 920 930 940 950 960 +85_C -40_C
FREQUENCY (MHz)
SR01740
SR01741
Figure 15.
LB Mixer Gain vs. Frequency
Figure 16.
LB Mixer IP3 vs. Frequency
1999 Mar 02
14
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
16.00 15.00 14.00 NOISE FIGURE (dB) 13.00 12.00 11.00 10.00 9.00 8.00 7.00 6.00 860 870 880 890 900 910 920 930 940 950 960 +25_C -40_C +85_C GAIN (dB)
28 26 24 22 +85_C 20 18 16 14 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 FREQUENCY (MHz) FREQUENCY (MHz) +25_C -40_C
SR01742
SR01744
Figure 17.
LB Mixer Noise Figure vs. Frequency
Figure 18.
HB Gain vs. Frequency
-8 -9 -10 -11 -12 IP3 (dBm) -13 -14 -15 -16 -17 -18 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 FREQUENCY (MHz) -40_C NOISE FIGURE (dB) +85_C +25_C
6 5 +85_C 4 +25_C 3 -40_C 2 1 0 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 FREQUENCY (MHz)
SR01745
SR01746
Figure 19.
HB IP3 vs. Frequency
Figure 20.
HB Noise Figure vs. Frequency
45
20 18
IMAGE REJECTION (dB)
40 +85_C IP2 (dBm) 35 +25_C 16 14 +85_C
+25_C
-40_C 12 10
30
-40_C
25 8 20 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 FREQUENCY (MHz) 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 6
SR01747
FREQUENCY (MHz)
SR01748
Figure 21.
HB Image Rejection vs. Frequency
Figure 22.
HB IP2 vs. Frequency
1999 Mar 02
15
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
-15 -17 -19 1 dB COMP (dBm) -21 -23 -25 -27 -29 -31 -33 -35 860 870 880 890 900 910 920 930 FREQUENCY (MHz) 940 950 960 +25_C -40_C +85_C 1 dB COMP (dBm)
-10.00 -11.00 -12.00 -13.00 -14.00 -15.00 -16.00 -17.00 -18.00 -19.00 -20.00 860 870 880 890 900 910 920 930 940 950 960 +25_C -40_C +85_C
SR01739
FREQUENCY (MHz)
SR01743
Figure 23.
LB LNA 1 dB Compression vs. Frequency
Figure 24.
LB Mixer 1 dB Compression vs. Frequency
-20 -22 -24 1 dB COMP (dBm) -26 -28 -30 -32 -34 -36 -38 -40 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 FREQUENCY (MHz) +85_C +25_C -40_C
SR01749
Figure 25.
HB 1 dB Compression vs. Frequency
1999 Mar 02
16
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
S-PARAMETERS
1:
56.906 -165.14 200MHz 32.531 -80.145 400MHz 27.213 -50.76 600MHz 22.594 -28.63 6.1759pF 900.125MHz
2:
3:
4:
4 1 3 2
START: 100MHz STOP: 1.35GHz
SR01632
Figure 26.
Typical S11 of the Low Band LNA at 3.75 V for the Low Band Receive Normal Mode
1:
9.2256U 170.16 200MHz 8.1698U 142.74 400MHz 6.7943U 124.27 600MHz 5.2793U 106.87 900MHz
2: 4 3 2 4: 3:
1
START: 100MHz STOP: 1.35GHz
SR01643
Figure 27.
Typical S21 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
1999 Mar 02
17
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
2:
7.0159mU 75.611 400MHz 7.8297mU 90.185 600MHz 14.215mU 120.84 900MHz
3:
4:
3 4 2
START: 100MHz STOP: 1.35GHz
SR01644
Figure 28.
Typical S12 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
1:
35.5 294.66 200MHz 351.72 -537.09 400MHz 77.625 -220.38 600MHz 30.91 -120.37 1.4692pF 900MHz
2:
3:
4: 1
2
4
3
START: 100MHz STOP: 1.35GHz
SR01633
Figure 29.
Typical S22 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
1999 Mar 02
18
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
133.16 -326.61 200MHz 74.875 -193.17 400MHz 46.625 -135.03 600MHz 25.117 -83.656 2.1107pF 901.375MHz
2:
3:
4:
1 2 4 3
START: 100MHz STOP: 1.35GHz
SR01634
Figure 30.
Typical S11 of Low Band LNA @ 3.75V for Receive Strong Signal Mode
1:
82.778mU 56.472 200MHz 101.74mU 30.696 400MHz 106.02mU 18.799 600MHz 97.527mU 992.89m 901.375MHz
2:
3:
4: 1 2 4 3
START: 100MHz STOP: 1.35GHz
SR01645
Figure 31.
Typical S21 of the Low Band LNA @ 3.75V for Receive Strong Signal Mode
1999 Mar 02
19
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
82.482mU 48.834 200MHz 101.97mU 15.44 400MHz 105.45mU -4.4673 600MHz 101.04mU -32.816 901.375MHz
2:
3:
4: 1 2 3
4
START: 100MHz STOP: 1.35GHz
SR01646
Figure 32.
Typical S12 for the Low Band LNA @ 3.75V for the Receive Strong Signal Mode
1:
65.453 303.47 200MHz 381.59 -432.3 400MHz 74.375 -206.25 600MHz 28.723 -108.71 1.6267pF 900MHz
2:
3:
4: 1
2
3 4
START: 100MHz STOP: 1.35GHz
SR01635
Figure 33.
Typical S22 for the Low Band LNA @ 3.75V for the Strong Receive Signal Mode
1999 Mar 02
20
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
102.26 -217.14 200MHz 24.902 -100.07 400MHz 20.596 -48.596 600MHz 20.036 -18.022 9.8121pF 900MHz
2:
3:
4:
4 1
3
2
START: 100MHz STOP: 1.35GHz
SR01636
Figure 34.
Typical S11 for the Low Band Mixer @ 3.75V for the Receive Normal Mode
1:
15.326 -41.15 200MHz 12.527 -7.6484 400MHz 19.854 11.1 600MHz 27.865 -9.7334 18.166pF 900.125MHz
2:
3:
4: 3
4
2
1
START: 100MHz STOP: 1.35GHz
SR01637
Figure 35.
Typical S11 for the Low Band LO @ 3.75V for the Low Band Receive Normal Mode
1999 Mar 02
21
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
70.324 -120.49 200MHz 45.121 -61.621 400MHz 39.195 -39.092 600MHz 33.025 -24.061 7.3497pF 900MHz
2:
3:
4:
4
3 2
1
START: 100MHz STOP: 1.35GHz
SR01638
Figure 36.
Typical S11 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1:
16.617U 161.94 200MHz 12.974U 134.43 400MHz 10.255U 118.75 600MHz 7.3947U 101.63 900MHz
2:
3: 4 2 3 4: 1
START: 100MHz STOP: 1.35GHz
SR01647
Figure 37.
Typical S21 of the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1999 Mar 02
22
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
4.6161mU 97.782 200MHz 6.5206mU 88.02 400MHz 9.1807mU 105.05 600MHz 15.58mU 119.06 900MHz
2:
3: 4 4:
3 1
2
START: 100MHz STOP: 1.35GHz
SR01648
Figure 38.
Typical S12 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1:
67.703 295.39 200MHz 436.03 -336.16 400MHz 105.43 -216.6 600MHz 37.477 -123.19 1.4355pF 900MHz
2:
3:
4: 1
2
4
3
START: 100MHz STOP: 1.35GHz
SR01639
Figure 39.
Typical S22 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1999 Mar 02
23
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
13.76 -15.057 1.55GHz 10.422 -5.5498 1.85GHz 11.58 -3.0508 1.95GHz 12.092 -616.21m 125.99pF 2.05GHz
2:
3:
4:
4
3 2
1
START: 1.40GHz STOP: 2.65GHz
SR01640
Figure 40.
Typical S11 for the High Band LNA @ 3.75V for the High Band Receive Normal Mode
1:
12.135 -53.891 1.55GHz 9.3379 -38.457 1.85GHz 8.75 -34.238 1.95GHz 8.7695 -31.25 2.4844pF 2.05GHz
2:
3:
4:
4
3 START: 1.40GHz STOP: 2.65GHz
2
1
SR01641
Figure 41.
Typical S11 for the High Band LNA @ 3.75V for the High Band Receive Strong Signal Mode
1999 Mar 02
24
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
20.574 -38.402 1.55GHz 18.104 -22.765 1.85GHz 24.446 -21.71 1.95GHz 20.975 -20.711 3.7486pF 2.05GHz
2:
3:
4:
4
3 2 1
START: 1.40GHz STOP: 2.65GHz
SR01642
Figure 42.
Typical S11 of the High Band LO @ 3.75V for the High Band Receive Normal Mode
1999 Mar 02
25
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 2. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Receive Normal Mode
FREQ (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 |S11| (U) 0.89 0.87 0.85 0.82 0.79 0.75 0.73 0.70 0.67 0.63 0.61 0.59 0.57 0.55 0.54 0.53 0.52 0.51 0.51 0.51 0.50 0.51 0.51 0.51 0.51 0.52 1999 Mar 02
26
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 3. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Strong Signal Mode
FREQ (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 |S11| (U) 0.94 0.92 0.90 0.88 0.87 0.85 0.85 0.84 0.83 0.82 0.81 0.80 0.80 0.79 0.78 0.78 0.77 0.77 0.76 0.76 0.76 0.76 0.76 0.76 0.76 0.75 1999 Mar 02
27
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 4. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Transmit On (Analog) Mode
FREQ (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 |S11| (U) 0.80 0.76 0.72 0.67 0.62 0.57 0.55 0.51 0.47 0.44 0.42 0.40 0.38 0.37 0.36 0.35 0.34 0.34 0.34 0.34 0.34 0.35 0.35 0.36 0.36 0.37 1999 Mar 02
28
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 5. Typical S-Parameters of Low Band Mixer Input at VCC = +3.75V, LB Receive Normal Mode
FREQ (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 |S11| (U) 0.85 0.84 0.85 0.85 0.85 0.85 0.85 0.80 0.75 0.70 0.67 0.57 0.53 0.51 0.49 0.48 0.49 0.47 0.47 0.47 0.47 0.48 0.48 0.49 0.50 0.51 1999 Mar 02
29
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 6. Typical S-Parameters of Low Band LO Input at VCC = +3.75V, LB Receive Normal Mode
FREQ (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 |S11| (U) 0.76 0.73 0.70 0.68 0.66 0.64 0.61 0.59 0.55 0.51 0.46 0.38 0.29 0.18 0.10 0.18 0.31 0.42 0.50 0.57 0.61 0.64 0.66 0.68 0.68 0.65 1999 Mar 02
30
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 7. Typical S-Parameters of HB LNA Input at VCC = +3.75V, HB Receive Normal Mode
FREQ (MHz) 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 |S11| (U) 0.58 0.59 0.59 0.60 0.62 0.63 0.65 0.66 0.66 0.66 0.65 0.63 0.64 0.61 0.60 0.59 0.58 0.58 0.57 0.57 0.57 0.56 0.57 0.57 0.56 0.56 1999 Mar 02
31
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 8. Typical S-Parameters of HB LNA Input at VCC = +3.75V, HB Strong Signal Mode
FREQ (MHz) 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 |S11| (U) 0.81 0.81 0.81 0.80 0.80 0.80 0.79 0.79 0.79 0.79 0.79 0.79 0.77 0.78 0.79 0.79 0.80 0.79 0.80 0.79 0.79 0.79 0.79 0.79 0.79 0.79 1999 Mar 02
32
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 9. Typical S-Parameters of HB LO Input at VCC = +3.75V, HB Receive Normal Mode
FREQ (MHz) 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 |S11| (U) 0.62 0.61 0.60 0.60 0.59 0.59 0.58 0.57 0.57 0.55 0.48 0.43 0.47 0.48 0.50 0.50 0.50 0.50 0.50 0.49 0.49 0.48 0.47 0.46 0.45 0.43 1999 Mar 02
33
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
SOT313-2
1999 Mar 02
34
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
NOTES
1999 Mar 02
35
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Data sheet status
Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Production
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 1999 All rights reserved. Printed in U.S.A. Date of release: 03-99 Document order number: 9397 750 05353
Philips Semiconductors
1999 Mar 02 36

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